GERMANIUM NO FURTHER A MYSTERY

Germanium No Further a Mystery

s is usually that of the substrate material. The lattice mismatch leads to a significant buildup of pressure energy in Ge layers epitaxially grown on Si. This strain Electrical power is primarily relieved by two mechanisms: (i) generation of lattice dislocations with the interface (misfit dislocations) and (ii) elastic deformation of both equally t

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